BF₂ implanted polycrystalline silicon gates with and without CoSi₂ : microstructure and work functionsLINDENBERGER, S; GEORGIOU, G. E; HILLENIUS, S. J et al.Journal of applied physics. 1991, Vol 69, Num 3, pp 1510-1517, issn 0021-8979, 8 p.Article

Thick selective electroless-plated cobalt-nickel alloy contacts to CoSi₂. I, Material propertiesGEORGIOU, G. E; BAIOCCHI, F. A; LUFTMAN, H. S et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 7, pp 2061-2069, issn 0013-4651Article

Annealing behavior of ion-implanted Fe in InPSCHWARZ, S. A; SCHWARTZ, B; SHENG, T. T et al.Journal of applied physics. 1985, Vol 58, Num 4, pp 1698-1700, issn 0021-8979Article

Carrier saturation in tin-doped InP films grown by liquid phase epitaxyCHIN, B. H; FRAHM, R. E; SHENG, T. T et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 6, pp 1373-1374, issn 0013-4651Article

Phosphorus depth profiles in thermally oxidized P-doped polysiliconCHANG, C. C; SHENG, T. T; SHANKOFF, T. A et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1168-1171, issn 0013-4651Article

Relaxed GeSi alloy grown on low-temperature buffers by MBEPENG, C. S; HUANG, Q; ZHOU, J. M et al.SPIE proceedings series. 1999, pp 231-236, isbn 0-8194-3100-1Conference Paper

Reverse L-shape sealed poly-buffer LOCOS technologySUNG, J. M; LU, C. Y; FRITZINGER, L. B et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 549-551, issn 0741-3106, 3 p.Article

Influence of the grain structure on the Fermi level in polycrystalline silicon: a quantum size effect?LIFSHITZ, N; LURYI, S; SHENG, T. T et al.Applied physics letters. 1987, Vol 51, Num 22, pp 1824-1826, issn 0003-6951Article

Study of structural faults in Ti-diffused lithium niobateTWIGG, M. E; MAHER, D. M; NAKAHARA, S et al.Applied physics letters. 1987, Vol 50, Num 9, pp 501-503, issn 0003-6951Article

Effect of active layer placement on the threshold current of 1.3-μm InGaAsP etched mesa buried heterostructure lasersDUTTA, N. K; NELSON, R. J; WILSON, R. B et al.Applied physics letters. 1984, Vol 45, Num 4, pp 337-339, issn 0003-6951Article

The effect of film thickness on the electrical properties of LPCVD polysilicon filmsLU, N. C. C; LU, C. Y; LEE, M. K et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 897-902, issn 0013-4651Article

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffersPENG, C. S; CHEN, H; WANG, J et al.Journal of crystal growth. 1999, Vol 201202, pp 530-533, issn 0022-0248Conference Paper

Self-aligned TiN barrier formation by rapid thermal nitridation of TiSi₂ in ammoniaAVID KAMGAR; BAIOCCHI, F. A; EMERSON, A. B et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2395-2401, issn 0021-8979, 7 p.Article

Equilibrium of nonstoichiometric Ta-Si deposits on polycrystalline silicon at high temperaturesBAIOCCHI, F. A; LIFSHITZ, N; SHENG, T. T et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6490-6495, issn 0021-8979Article

«Transparent» metals: preparation and characterization of light-transmitting palladium, rhodium, and rhenium films = Métaux «transparents»: préparation et caractérisation de la lumière transmise par les films de palladium, rhodium et de rhéniumDEGANI, Y; SHENG, T. T; HELLER, A et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1987, Vol 228, Num 1-2, pp 167-178, issn 0022-0728Article

Diffraction pattern indexing in lithium niobateTWIGG, M. E; NAKAHARA, S; MAHER, D. M et al.Journal of microscopy (Print). 1986, Vol 142, Num 3, pp 277-287, issn 0022-2720Article

Transparent metals: preparation and characterization of light-transmitting platinum films = Métaux «transparents»: préparation et caractérisation de couches de platine transmettant la lumièreHELLER, A; ASPNES, D. E; PORTER, J. D et al.Journal of physical chemistry (1952). 1985, Vol 89, Num 21, pp 4444-4452, issn 0022-3654Article

Leakage and breakdown in thin oxide capacitors: correlation with decorated stacking faultsLIN, P. S. D; MARCUS, R. B; SHENG, T. T et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 9, pp 1878-1883, issn 0013-4651Article

Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare si below 1000 °C and temperature for minimum low-K interfacial oxide for high-K dielectric on SiLAU, W. S; QIAN, P. W; HAN, Taejoon et al.Microelectronics and reliability. 2007, Vol 47, Num 2-3, pp 429-433, issn 0026-2714, 5 p.Article

Ultra-fast (0.5-μm) CMOS circuits in fully depleted SOI filmsKAMGAR, A; HILLENIUS, S. J; CONG, H.-I. L et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 640-647, issn 0018-9383Article

Shallow junctions by out-diffusion from BF₂ implanted polycrystalline siliconGEORGIOU, G. E; SHENG, T. T; KOVALCHICK, J et al.Journal of applied physics. 1990, Vol 68, Num 7, pp 3707-3713, issn 0021-8979Article

Arsenic drift in SiO₂: temperature, dose, and thermal gradient effectsTRIMBLE, L. E; CELLER, G. K; WEST, K. W et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 182-188, issn 0013-4651Article

Kinetics of arsenic activation and clustering in high dose implanted siliconKAMGAR, A; BAIOCCHI, F. A; SHENG, T. T et al.Applied physics letters. 1986, Vol 48, Num 16, pp 1090-1092, issn 0003-6951Article

Formation and thermal stability of CoSi₂ on polycrystalline SiVAIDYA, S; MURARKA, S. P; SHENG, T. T et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 971-978, issn 0021-8979Article

TEM cross section sample preparation technique for III-V compound semiconductor device materials by chemical thinningCHU, S. N. G; SHENG, T. T.Journal of the Electrochemical Society. 1984, Vol 131, Num 11, pp 2663-2667, issn 0013-4651Article